High Capacitance Ratio RF MEMS Dielectric-Less Switched Capacitor

被引：0

作者：

Fall, Mansour ^{[1
]}

Fouladi, Siamak ^{[2
]}

Domingue, Frederic ^{[1
]}

Dieppedale, Christel ^{[2
]}

Reig, Bruno ^{[3
]}

Mansour, Raafat R. ^{[2
]}

机构：

[1] UQTR, Lab Microsyst & Telecommun, Trois Rivieres, PQ, Canada

[2] Univ Waterloo, CIRFE, Waterloo, ON N2L 3G1, Canada

[3] CEA, LETI, Grenoble, France

来源：

2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2013年

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel RF-MEMS dielectric-less switched capacitor that exhibits a high capacitance ratio. The proposed design is based on a floating contact element concept that results in a reduced up state capacitance. The switched capacitor was fabricated on 200 mm silicon wafer with an industrial process developed for manufacturing robust and reliable packaged RF MEMS devices. RF Measurements up to 20 GHz were performed on the fabricated device, showing a capacitance ratio higher than 30: 1 with a good quality factor over the operating frequency range. This RF MEMS switched capacitor is suitable for adaptive and reconfigurable RF circuits.

引用

页码：356 / 359

页数：4

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