32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL

被引：63
|
作者：
Westbergh, P. [1 ]
Gustavsson, J. S. [1 ]
Haglund, A. [1 ]
Larsson, A. [1 ]
Hopfer, F. [2 ,3 ]
Fiol, G. [2 ,3 ]
Bimberg, D. [2 ,3 ]
Joel, A. [4 ]
机构：
[1] Chalmers, Photon Lab, Dept Microelect & Nanosci, SE-41296 Gothenburg, Sweden
[2] Tech Univ Berlin, Ctr NanoPhoton, D-10623 Berlin, Germany
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[4] IQE Europe Ltd, Cardiff CF3 0LW, S Glam, Wales
来源：
ELECTRONICS LETTERS | 2009年 / 45卷 / 07期
关键词：
Indium alloys - Surface emitting lasers - Semiconducting indium gallium arsenide - Semiconductor alloys - Gallium alloys - Semiconductor quantum wells;
D O I：
10.1049/el.2009.0201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Error free transmission over multimode fibre at data rates up to 32 Gbit/s at 25 degrees C and 25 Gbit/s at 85 degrees C using an oxide confined 850 nm VCSEL biased at a current density of 11-14 kA/cm(2) is demonstrated. The VCSEL is optimised for high-speed by reducing capacitance and self-heating and by using strained InGaAs quantum wells for high differential gain.
引用
收藏
页码：366 / 367
页数：2
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