Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

被引:55
|
作者
Choi, YC
Bae, DJ
Lee, YH [1 ]
Lee, BS
Han, IT
Choi, WB
Lee, NS
Kim, JM
机构
[1] Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea
[2] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
[3] Jeonbuk Natl Univ, Dept Phys, Chonju 561756, South Korea
[4] Jeonbuk Natl Univ, Fac New Mat Engn, Chonju 561756, South Korea
[5] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea
关键词
carbon; microwave plasma-enhanced chemical vapor deposition; low temperature;
D O I
10.1016/S0379-6779(99)00285-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have synthesized pure carbon nanotubes at very low temperature using microwave plasma-enhanced chemical vapor deposition (MPECVD) with methane/hydrogen gas. Ratio of a gas mixture (CH4/H-2) and deposition time at a substrate temperature below 520 degrees C are optimized. Pure and dense carbon nanotubes are grown uniformly over a large area of Ni-coated silicon substrates without any pretreatment of substrates. The diameters and lengths of carbon nanotubes could be controlled by changing the ratio of gas mixture and the growth time. Raman spectrum clearly shows the peak at 1592 cm(-1) (G-band), indicating the formation of graphitized carbon nanotubes. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:159 / 163
页数:5
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