Ultrafast band-gap shift induced by a strain pulse in semiconductor heterostructures

被引：65
|
作者：
Akimov, A. V. [1 ]
Scherbakov, A. V.
Yakovlev, D. R.
Foxon, C. T.
Bayer, M.
机构：
[1] Univ Dortmund, D-44221 Dortmund, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.97.037401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The conventional piezospectroscopic effect is extended to picosecond time scales by using ultrashort strain pulses injected into semiconductor heterostructures. The strain pulses with durations of similar to 10 ps are generated in a metal transducer film by intense femtosecond laser pulses. They propagate coherently in the GaAs/(Al,Ga)As heterostructure over a distance of 100 mu m and shift the band gaps by several meV as detected optically for quantum well exciton resonances by pump-probe techniques and time-resolved photoluminescence.
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页数：4
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