Optical studies of ZnS:Mn films grown by pulsed laser deposition
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作者:
Yeung, KM
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Yeung, KM
Tsang, WS
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Tsang, WS
Mak, CL
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机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Mak, CL
[1
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Wong, KH
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Wong, KH
机构:
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Ctr Mat Res, Hong Kong, Hong Kong, Peoples R China
High-quality ZnS:Mn thin films have been deposited on (001)Si substrates at various temperatures using pulsed laser deposition. Their structural properties were characterized by x-ray diffraction. Optical studies by spectroscopic ellipsometry, optical transmittance, and photoluminescence measurements were systematically carried out on all film samples. In the analysis of the measured SE spectra, a modified double-layer Sellmeier model was adopted to represent the optical properties of the ZnS:Mn films. In this model, the films were assumed to consist of two layers-a bottom bulk ZnS:Mn layer and a surface layer composed of bulk ZnS:Mn as well as void. Good agreement was obtained between the measured spectra and the model calculations. Changes in the refractive indices of the ZnS:Mn films as a function of growth temperature were investigated. The PL and absorption measurements revealed that the orange-yellow emission band at similar to590 nm and the absorption edge at similar to370 nm upshifted to shorter wavelengths for films deposited at higher substrate temperatures. These results imply that the energy gap of the ZnS:Mn films increases with growth temperature. The observed changes of optical properties in these films are correlated to their structural qualities. (C) 2002 American Institute of Physics.
机构:
Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
Binzhou Univ, Coll Aeronaut Engn, Binzhou 256603, Peoples R ChinaQufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
Wang, Cai-Feng
Li, Qing-Shan
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机构:
Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264025, Peoples R ChinaQufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
Li, Qing-Shan
Wang, Ji-Suo
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机构:
Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R ChinaQufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
Wang, Ji-Suo
Zhao, Feng-Zhou
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机构:
Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264025, Peoples R ChinaQufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
Zhao, Feng-Zhou
Zhang, Li-Chun
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机构:
Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264025, Peoples R ChinaQufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
机构:
College of Physics and Engineering,Qufu Normal University
School of Physics and Optoelectronic Engineering,Ludong UniversityCollege of Physics and Engineering,Qufu Normal University
李清山
王继锁
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机构:
College of Physics and Engineering,Qufu Normal UniversityCollege of Physics and Engineering,Qufu Normal University
机构:
College of Physics and Engineering,Qufu Normal University
School of Physics and Optoelectronic Engineering,LudongCollege of Physics and Engineering,Qufu Normal University
李清山
王继锁
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机构:
College of Physics and Engineering,Qufu Normal UniversityCollege of Physics and Engineering,Qufu Normal University
王继锁
赵风周
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机构:
School of Physics and Optoelectronic Engineering,LudongCollege of Physics and Engineering,Qufu Normal University
赵风周
张立春
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机构:
School of Physics and Optoelectronic Engineering,LudongCollege of Physics and Engineering,Qufu Normal University