Excitonic properties of ordered and disordered SiGe nanocrystals

被引：2
|
作者：
de Oliveira, E. L. [2 ]
Albuquerque, E. L. [2 ]
de Sousa, J. S. [1 ]
Farias, G. A. [1 ]
机构：
[1] Univ Fed Ceara, Dept Fis, BR-60455900 Fortaleza, Ceara, Brazil
[2] Univ Fed Rio Grande do Norte, Dept Fis, BR-59072900 Natal, RN, Brazil
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 4-5期
关键词：
Core-shell quantum dots; Alloyed nanostructures; Quantum confinement; PHOTOLUMINESCENCE;
D O I：
10.1016/j.mejo.2008.11.040
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The excitonic properties of ordered and disordered Si/Ge nanocrystals (NCs) are investigated by means of ab initio calculations. In the former group, we investigate Si(core)/Ge(shell) and Ge(core)/Si(shell) NCs, while alloyed Si1-xGex NCs are studied in the latter focusing on the role of the molar fraction x. Concerning ordered NCs, we show that Ge/Si (Si/Ge) NCs exhibit type II confinement in the conduction (valence) band. As for disordered NCs, we show that optical gaps and radiative recombination lifetimes decrease with x. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：762 / 765
页数：4
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