A model for the open circuit voltage relaxation in Cu(In,Ga)Se2 heterojunction solar cells

被引:24
|
作者
Meyer, T [1 ]
Schmidt, M
Engelhardt, F
Parisi, J
Rau, U
机构
[1] Univ Oldenburg, Fac Phys, D-26111 Oldenburg, Germany
[2] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany
来源
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D O I
10.1051/epjap:1999228
中图分类号
O59 [应用物理学];
学科分类号
摘要
This article investigates the electronic transport properties of ZnO/CdS/Cu(In,Ga)Se-2 heterojunction solar cells during and after illumination or forward bias in the dark. We observe a relaxation of the open circuit voltage under constant illumination as well as a relaxation current in the dark. Both phenomena are accompanied by an increase of the sample capacitance. We introduce a general quantitative model concept for the open circuit voltage relaxation and related effects in heterojunction devices that explains the phenomena as a consequence of the persistent capture of charge carriers within the space charge region. We apply our concept to develop a specific quantitative model for the observed metastablity in Cu(In,Ga)Sea heterojunction solar cells.
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页码:43 / 52
页数:10
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