Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method

Formation of superhard materials carbon nitride CN, by using ion-beam synthesis method is reported. 100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures. The samples were evaluated by X-ray photoelectron spectroscopy (XPS), Fourier transformation-infrared absorption spectroscopy (FTIR), Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and Vickers microhardness measurement. The results show that the buried carbon nitride CN, layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film. Implantation of reactive ions into silicon (IRIS) computer. program has been used to simulate the formation of the buried beta-C3N4 layer as N+ ions art implanted into carbon. A good agreement between experimental measurements and IRIS simulation is found.