High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

被引：1
|
作者：
Woo, Whang Je [1 ]
Nam, Taewook [1 ]
Oh, Il-Kwon [1 ]
Maeng, Wanjoo [2 ]
Kim, Hyungjun [1 ]
机构：
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea
[2] Micron Technol Inc, 8000 S Fed Way, Boise, ID 83707 USA
来源：
METALS AND MATERIALS INTERNATIONAL | 2018年 / 24卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Metal oxide; Copper gate; Copper diffusion; Thin-film transistor; COPPER; TEMPERATURE; ELECTRODE; STRESS; TA;
D O I：
10.1007/s12540-018-0045-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.
引用
收藏
页码：652 / 656
页数：5
相关论文
共 50 条
  • [41] High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb
    Ma, Yuanxiao
    Tang, Wing Man
    Han, Chuanyu
    Lai, Pui To
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (05):
  • [42] High-Performance, Ultrathin, Ultraflexible Organic Thin-Film Transistor Array Via Solution Process
    Ren, Hang
    Cui, Nan
    Tang, Qingxin
    Tong, Yanhong
    Zhao, Xiaoli
    Liu, Yichun
    SMALL, 2018, 14 (33)
  • [43] High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder
    Kim, Taikyu
    Choi, Cheol Hee
    Kim, Se Eun
    Kim, Jeong-Kyu
    Jang, Jaeman
    Choi, SeungChan
    Noh, Jiyong
    Park, Kwon-Shik
    Kim, Jeomjae
    Yoon, SooYoung
    Jeong, Jae Kyeong
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) : 269 - 272
  • [44] High-Performance Poly-Si Vertical Nanowire Thin-Film Transistor and the Inverter Demonstration
    Le, T. T.
    Yu, H. Y.
    Sun, Y.
    Singh, N.
    Zhou, X.
    Shen, N.
    Lo, G. Q.
    Kwong, D. L.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (06) : 770 - 772
  • [45] Defect control process technologies for high-performance polycrystalline si thin-film transistor fabrication
    Higashi, S
    Abe, D
    Hiroshima, Y
    Miyashita, K
    Kawamura, T
    Inoue, S
    Shimoda, T
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 49 - 54
  • [46] High-Performance n-Channel Organic Thin-Film Transistor Based on Naphthalene Diimide
    Dey, Anamika
    Kalita, Anamika
    Iyer, Parameswar Krishnan
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (15) : 12295 - 12301
  • [47] HIGH-PERFORMANCE A-SI-H THIN-FILM TRANSISTOR USING LIGHTLY DOPED CHANNEL
    SAH, WJ
    LIN, JL
    LEE, SC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 676 - 678
  • [48] High-performance polymer top-contact thin-film transistor with orthogonal photolithographic process
    Wang, Lu
    Cai, Kunlin
    Liu, Yu
    Xie, Yingtao
    MICROELECTRONICS JOURNAL, 2022, 127
  • [49] High-performance poly-Ge thin-film transistor with NiGe schottky source/drain
    Sadoh, T.
    Kamizuru, H.
    Kenjo, A.
    Miyao, M.
    PRICM 6: SIXTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-3, 2007, 561-565 : 1181 - 1184
  • [50] A high performance amorphous silicon thin film transistor with a planarized gate
    Lim, BC
    Choi, YJ
    Jang, J
    Radler, M
    PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES, 1999, 98 (22): : 163 - 173
12345