High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

被引：1
|
作者：
Woo, Whang Je [1 ]
Nam, Taewook [1 ]
Oh, Il-Kwon [1 ]
Maeng, Wanjoo [2 ]
Kim, Hyungjun [1 ]
机构：
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea
[2] Micron Technol Inc, 8000 S Fed Way, Boise, ID 83707 USA
来源：
METALS AND MATERIALS INTERNATIONAL | 2018年 / 24卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Metal oxide; Copper gate; Copper diffusion; Thin-film transistor; COPPER; TEMPERATURE; ELECTRODE; STRESS; TA;
D O I：
10.1007/s12540-018-0045-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.
引用
收藏
页码：652 / 656
页数：5
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