Phase-transition driven memristive system

被引：318
|
作者：
Driscoll, T. [1 ]
Kim, H. -T. [2 ]
Chae, B. -G. [2 ]
Di Ventra, M. [1 ]
Basov, D. N. [1 ]
机构：
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] ETRI, MIT Device Team, Taejon 305350, South Korea
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期
关键词：
metal-insulator transition; resistors; thin films; vanadium compounds; MOTT TRANSITION; MECHANISM; DEVICES; MEMORY; FILMS;
D O I：
10.1063/1.3187531
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena.
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页数：3
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