Intersubband stimulated emission in GaAs/AlGaAs quantum wells: Pump-probe experiments using a two-color free-electron laser

被引:48
|
作者
GauthierLafaye, O
Sauvage, S
Boucaud, P
Julien, FH
Prazeres, R
Glotin, F
Ortega, JM
ThierryMieg, V
Planel, R
Leburton, JP
Berger, V
机构
[1] UNIV PARIS 11,CLIO,LURE,F-91405 ORSAY,FRANCE
[2] CNRS,MICROSTRUCT & MICROELECT LAB,UPR 20,F-92220 BAGNEUX,FRANCE
[3] UNIV ILLINOIS,BECKMAN INST,URBANA,IL 61801
[4] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE
关键词
D O I
10.1063/1.119125
中图分类号
O59 [应用物理学];
学科分类号
摘要
Intersubband stimulated emission under optical pumping has been observed in the conduction band of GaAs-AlGaAs quantum wells. The asymmetric coupled quantum wells which exhibit three conduction bound levels are designed to exhibit population inversion under optical pumping. An optical excitation at lambda = 9.2 mu m is used to bleach the absorption between the ground and second excited subband. The population inversion between excited subbands is pumped and probed on a picosecond time scale by a tunable two-color free-electron laser. The stimulated amplification is studied at low temperature in infrared waveguides as a function of the waveguide length and of the probe wavelength. A stimulated gain approximate to 80 cm(-1) is measured at 12.5 mu m in agreement with calculations. (C) 1997 American Institute of Physics.
引用
收藏
页码:3197 / 3199
页数:3
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