Self-diffusion and defect annihilation in nanocrystalline Fe films probed by neutron reflectometry

被引:25
|
作者
Chakravarty, Sujoy [1 ]
Schmidt, Harald [1 ]
Tietze, Ursula [2 ]
Lott, Dieter [2 ]
Lalla, N. P. [3 ]
Gupta, Ajay [3 ]
机构
[1] Clausthal Univ Technol, Inst Met, Mat Phys Grp, D-38678 Clausthal Zellerfeld, Germany
[2] GKSS Res Ctr Geesthacht GmbH, D-21502 Geesthacht, Germany
[3] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India
来源
PHYSICAL REVIEW B | 2009年 / 80卷 / 01期
关键词
annealing; grain growth; interstitials; ion beam assisted deposition; iron; metallic thin films; nanostructured materials; self-diffusion; sputter deposition; vacancies (crystal); GRAIN-GROWTH KINETICS; HIGH-PURITY IRON; METALLIC GLASSES; STRUCTURAL RELAXATION; ALPHA-IRON; DISLOCATIONS; DEFORMATION; ALLOYS;
D O I
10.1103/PhysRevB.80.014111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-diffusion in ion-beam-sputtered nanocrystalline Fe is studied between 310 and 510 degrees C, using neutron reflectometry on [(nat)Fe(7 nm)/(57)Fe(3 nm)](15) isotope multilayers. Neutron reflectometry has the advantage over other methods of diffusivity determination, that diffusion lengths on the order of 1 nm and below can be determined. This enables diffusion experiments in a nanostructure which is not significantly modified by grain growth during annealing. The determined diffusivities are time depended and decrease by more than two orders of magnitude during isothermal annealing. In early stages, diffusion is controlled by frozen-in nonequilibrium point defects (interstitials or vacancies) present after deposition. The decrease in the diffusivities can be attributed to the annihilation of these point defects. For very long annealing times the diffusivities above 400 degrees C are in good agreement with volume diffusivities measured in single crystals given in literature. However, at a temperature of 400 degrees C and below the diffusivities are still higher than extrapolated literature data also after more than 8 days of annealing, indicating that defect annihilation is still going on.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Grain boundary self-diffusion in Fe films with a stable nanostructure
    Schmidt, H.
    Chakravarty, S.
    Jiang, M.
    Hueger, E.
    Parida, P. K.
    Geue, T.
    Stahn, J.
    Tietze, U.
    Lott, D.
    JOURNAL OF MATERIALS SCIENCE, 2012, 47 (09) : 4087 - 4092
  • [22] Self-diffusion and relative diffusion in defect turbulence
    Huber, G
    Schroder, E
    Alstrom, P
    PHYSICA D, 1996, 96 (1-4): : 1 - 8
  • [23] Grain boundary self-diffusion in Fe films with a stable nanostructure
    H. Schmidt
    S. Chakravarty
    M. Jiang
    E. Hüger
    P. K. Parida
    T. Geue
    J. Stahn
    U. Tietze
    D. Lott
    Journal of Materials Science, 2012, 47 : 4087 - 4092
  • [24] DEFECT ENERGETICS FOR SELF-DIFFUSION IN SODIUM
    HO, PS
    PHYSICAL REVIEW B, 1973, 7 (08): : 3550 - 3557
  • [25] INVESTIGATION OF SELF-DIFFUSION IN NANOCRYSTALLINE COPPER BY NMR
    DICKENSCHEID, W
    BIRRINGER, R
    GLEITER, H
    KANERT, O
    MICHEL, B
    GUNTHER, B
    SOLID STATE COMMUNICATIONS, 1991, 79 (08) : 683 - 686
  • [26] Fe and N self-diffusion in amorphous FeN: A SIMS and neutron reflectivity study
    Chakravarty, S.
    Gupta, M.
    Gupta, A.
    Rajagopalan, S.
    Balamurugan, A. K.
    Tyagi, A. K.
    Deshpande, U. P.
    Horisberger, M.
    Gutberlet, T.
    ACTA MATERIALIA, 2009, 57 (04) : 1263 - 1271
  • [27] SELF-DIFFUSION AND DEFECT STRUCTURE OF CADMIUM SULFIDE
    KUMAR, V
    KROGER, FA
    JOURNAL OF SOLID STATE CHEMISTRY, 1971, 3 (03) : 387 - &
  • [28] DEFECT STRUCTURE OF CDTE - SELF-DIFFUSION DATA
    CHERN, SS
    KROGER, FA
    JOURNAL OF SOLID STATE CHEMISTRY, 1975, 14 (01) : 44 - 51
  • [29] DEFECT STRUCTURE AND SELF-DIFFUSION IN FERROUS SULFIDE
    DANIELEWSKI, M
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1979, 4 (1-2): : 187 - 195
  • [30] SELF-DIFFUSION AND DEFECT CONCENTRATION IN CUPROUS SULPHIDE
    BARTKOWITCZ, I
    FRYT, E
    MROWEC, S
    BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES CHIMIQUES, 1968, 16 (05): : 263 - +