The influence of the stacking sequence on the electronic structure and optical properties of CaSi2

被引:6
|
作者
Kulatov, E
Nakayama, H
Ohta, H
机构
[1] KOBE UNIV, FAC ENGN, DEPT ELECT & ELECT ENGN, KOBE, HYOGO 657, JAPAN
[2] KOBE UNIV, FAC SCI, DEPT PHYS, KOBE, HYOGO 657, JAPAN
关键词
D O I
10.1088/0953-8984/9/46/014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic structure and optical properties of CaSi2 have been studied by the ab initio full-potential and full-relativistic LMTO methods. Calculations are employed to elucidate the influence of the stacking sequence on the band states and Optical spectra. Unusually strong hybridization of the Ca spd states with the Si p states is evident in both of the crystal polymorphs. The Fermi velocities and charge-density distributions indicate significant spatial anisotropy in the TR3 structure. For both of the crystal structures, large in-plane and out-of-plane anisotropy of the optical conductivity has also been found.
引用
收藏
页码:10159 / 10171
页数:13
相关论文
共 50 条
  • [31] Metallic band structure of CaF2 thin films grown on silicon(111): Possible formation of CaSi2
    Takahashi, Yuzuru
    Ichinokura, Satoru
    Shimizu, Ryota
    Shiraki, Susumu
    Hitosugi, Taro
    Hirahara, Toru
    APPLIED SURFACE SCIENCE, 2020, 509
  • [32] Photoluminescence properties of Eu2+ -activated CaSi2 O2 N2: Redshift and concentration quenching
    Song, Xiufeng
    Fu, Renli
    Agathopoulos, Simeon
    He, Hong
    Zhao, Xinran
    Zhang, Shaodong
    Journal of Applied Physics, 2009, 106 (03):
  • [33] Influence of pressure effect on CdS electronic structure and optical properties
    Li C.
    Dang S.
    Zhang K.
    Tu L.
    Guangxue Xuebao/Acta Optica Sinica, 2011, 31 (06):
  • [34] Influence of Mg doping on the electronic structure and optical properties of GaN
    Du, Y.
    Chang, B.
    Zhang, J.
    Wang, H.
    Li, B.
    Wang, M.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (10): : 1050 - 1055
  • [35] INFLUENCE OF STACKING DISORDER ON ELECTRONIC PROPERTIES OF LAYERED SEMICONDUCTORS
    MASCHKE, K
    SCHMID, P
    PHYSICAL REVIEW B, 1975, 12 (10): : 4312 - 4315
  • [36] Electronic structure and optical properties of β-FeSi2
    Antonov, VN
    Jepsen, O
    Henrion, W
    Rebien, M
    Stauss, P
    Lange, H
    PHYSICAL REVIEW B, 1998, 57 (15): : 8934 - 8938
  • [37] Electronic structure and optical properties of ZnGeN2
    Limpijumnong, S
    Rashkeev, SN
    Lambrecht, WRL
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [38] OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF ZNSIAS2
    SHAY, JL
    BUEHLER, E
    WERNICK, JH
    PHYSICAL REVIEW B, 1971, 3 (06): : 2004 - &
  • [39] The influence of the stacking orientation of C and BN stripes in the structure, energetics, and electronic properties of BC2N nanotubes
    Machado, M.
    Kar, T.
    Piquini, P.
    NANOTECHNOLOGY, 2011, 22 (20)
  • [40] Tuning of Electronic and Optical Properties of PtS2 Monolayer Using Stacking Engineering
    Priyanka
    Kumar, Ramesh
    Chand, Fakir
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (10):