Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

被引:13
|
作者
Templeman, Tzvi [1 ,2 ]
Perez, Maayan [1 ,2 ]
Friedman, Ofir [1 ,2 ]
Abutbul, Ran Eitan [1 ,2 ]
Shandalov, Michael [3 ]
Ezersky, Vladimir [1 ,2 ]
Konovalov, Oleg [4 ]
Golan, Yuval [1 ,2 ]
机构
[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Ilse Katz Inst Nanoscale Sci & Technol, IL-84105 Beer Sheva, Israel
[3] Nucl Res Ctr Negev, Dept Phys, POB 9001, Beer Sheva, Israel
[4] European Synchrotron Radiat Facil, Beamline ID10, Grenoble, France
基金
以色列科学基金会;
关键词
CHEMICAL BATH DEPOSITION; EPITAXIAL-GROWTH; PBS; SUPERLATTICES; CDS;
D O I
10.1039/c9qm00155g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report layer-by-layer growth of single crystal PbS films with unprecedented quality using chemical solution deposition, on par with much more sophisticated growth techniques. Ex situ transmission electron microscopy and in-house X-ray diffraction established the monocrystalline nature of the films and the atomically smooth film surface. High brilliance synchrotron X-rays were employed in grazing incidence geometry for in situ monitoring the formation of a gallium sulfide interfacial layer, and for establishing layer-by-layer growth of the subsequent PbS film. Our findings show that by maintaining a large reservoir of free sulfide ions, layer-by-layer growth is maintained by reducing the interfacial surface free energy.
引用
收藏
页码:1538 / 1544
页数:7
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