Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots

被引：249
|
作者：
Liu, N [1 ]
Tersoff, J
Baklenov, O
Holmes, AL
Shih, CK
机构：
[1] Univ Texas, Dept Phys, Austin, TX 78712 USA
[2] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA
[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.84.334
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We use cross-sectional scanning tunneling microscopy to examine the shape and composition distribution of In0.5Ga0.5As quantum dots (QDs) formed by capping heteroepitaxial islands. The QDs have a truncated pyramid shape. The composition appears highly nonuniform, with an In-rich core having an inverted-triangle shape. Thus the electronic properties will be drastically altered, relative to the uniform composition generally assumed in device modeling. Theoretical analysis of the QD growth suggests a simple explanation for the unexpected shape of the In-rich core.
引用
收藏
页码：334 / 337
页数：4
相关论文
共 50 条
  • [31] Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
    Z-Q. Fang
    Q. H. Xie
    D. C. Look
    J. Ehret
    J. E. Van Nostrand
    Journal of Electronic Materials, 1999, 28 : L13 - L16
  • [32] SELF-FORMED IN0.5GA0.5AS QUANTUM DOTS ON GAAS SUBSTRATES EMITTING AT 1.3 MU-M
    MUKAI, K
    OHTSUKA, N
    SUGAWARA, M
    YAMAZAKI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1710 - L1712
  • [33] Effect of lateral electric field on the transition energies of neutral and charged excitons in In0.5Ga0.5As/GaAs quantum dots
    Saito, Toshio
    Nakaoka, Toshihiro
    Arakawa, Yasuhiko
    PHYSICAL REVIEW B, 2015, 91 (11):
  • [34] Si-doping and annealing effects on In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy
    Lee, CM
    Choi, SH
    Lee, JI
    Koguchi, N
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (3-4): : 211 - 216
  • [35] Piezoelectric effects in In0.5Ga0.5As self-assembled quantum dots grown on (311)B GaAs substrates
    Patanè, A
    Levin, A
    Polimeni, A
    Schindler, F
    Main, PC
    Eaves, L
    Henini, M
    APPLIED PHYSICS LETTERS, 2000, 77 (19) : 2979 - 2981
  • [36] Morphology and Optical Properties of Self-Assembled In0.5Ga0.5As Quantum Dots with Different Spacer Layer Thickness
    Didik Aryanto
    Abd. Khamim Ismail
    Zulkafli Othaman
    Tsinghua Science and Technology, 2010, 15 (05) : 534 - 539
  • [37] Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
    Guo, Daqian
    Jiang, Qi
    Tang, Mingchu
    Chen, Siming
    Mazur, Yuriy I.
    Maidaniuk, Y.
    Benamara, Mourad
    Semtsiv, Mykhaylo P.
    Masselink, William T.
    Salamo, Gregory J.
    Liu, Huiyun
    Wu, Jiang
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (09)
  • [38] Diffusivity transients and radiative recombination in intermixed In0.5Ga0.5As/GaAs quantum structures
    Leon, R
    Williams, DRM
    Krueger, J
    Weber, ER
    Melloch, MR
    PHYSICAL REVIEW B, 1997, 56 (08) : R4336 - R4339
  • [39] Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
    Jolley, G.
    Xiao, B.
    Fu, L.
    Tan, H. H.
    Jagadish, C.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (11)
  • [40] In0.5Ga0.5As quantum dot intermixing and evaporation in GaAs capping layer growth
    Lee, JS
    Ren, HW
    Sugou, S
    Masumoto, Y
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) : 6686 - 6688
12345