Impacts of Fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs

被引：0
|
作者：
Sun, X. [1 ]
Zhang, Y. [2 ]
Chang-Liao, K. S. [3 ]
Palacios, T. [2 ]
Ma, T. P. [1 ]
机构：
[1] Yale Univ, New Haven, CT 06520 USA
[2] MIT, Cambridge, MA 02139 USA
[3] Natl Tsing Hua Univ, Hsinchu 30013, Taiwan
来源：
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2014年
关键词：
THRESHOLD-VOLTAGE;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The impact of fluorine treatment on AlGaN/GaN MOS-HEMTs has been investigated. Fluorine was found to suppress pre-existing traps in MOS-HEMT, which improves the off-state at high temperatures. Fluorine doping and associated etching, however, also generates slow border traps and fast interface states that degrade the MOS-HEMT performance. Multi-faceted mechanisms for drain current degradation due to F-doping and gate-recess-etch have been investigated in enhancement-mode MOS-HEMTs.
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页数：4
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