Supersaturating Silicon with Titanium by Continuous-Wave Laser Irradiation of Sputtered Titanium Film on Silicon

被引：1

作者：

Fan, Bao-Dian ^{[1
]}

Qiu, Yu ^{[2
]}

Chen, Rong ^{[1
]}

Pan, Miao ^{[3
]}

Cai, Li-Han ^{[1
]}

Zheng, Jiang-Hui ^{[1
]}

Chen, Chao ^{[1
,4
]}

机构：

[1] Xiamen Univ, Coll Energy, Xiamen 361005, Peoples R China

[2] Fujian Jiangxia Univ, Inst Adv Photovolta, Fuzhou 350108, Peoples R China

[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[4] Xiamen Univ, Sch Phys & Mech & Elect Engn, Xiamen 361005, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2016年 / 33卷 / 02期

基金：

中国国家自然科学基金;

关键词：

SOLAR-CELLS; SI;

D O I：

10.1088/0256-307X/33/2/026103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A method of magnetron sputtering followed by continuous-wave (cw) laser irradiation is developed to prepare crystalline silicon supersaturated with titanium. The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064 nm cw laser in a specially designed home-made facility. The thickness of the Si layer, within which the concentration of Ti surpasses the Mott limit, reaches 365 nm and the maximum concentration of Ti reaches 1.83 x 10(21) cm(-3). The crystalline structure of the Si samples is kept unchanged after cw laser irradiation. These results show that the current method can be an efficient way to obtain an intermediate band semiconductor material for solar cells.

引用

页数：4

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