Nanoimprint lithography using novolak-type photoresist and soft mold at room temperature

被引:2
|
作者
Numai, T [1 ]
Koide, T [1 ]
Minemoto, T [1 ]
Takakura, H [1 ]
Hamakawa, Y [1 ]
机构
[1] Ritsumeikan Univ, Coll Sci & Engn, Shiga 5258577, Japan
关键词
nanoimprint; novolak-type photoresist; polyester sheet;
D O I
10.1143/JJAP.43.L794
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanoimprint lithography using novolak-type photoresist and a soft mold was successfully demonstrated. Two-dimensional square gratings with the pitch of 1000 nm and height of 300 nin formed on a polyester sheet. were transferred onto novolaktype photoresist by combining pressing and successive developing of the novolak-type photoresist. By using the patterned novolak-type photoresist as an etching mask, a thermally oxidized 320-nm-thick SiO2 layer on a Si substrate was etched by reactive ion etching with CHF3 gas. Through this fabrication process, holes with the radius of 450 nm and depth of 320 nm were obtained on the thermally oxidized 320-nm-thick SiO2 layer.
引用
收藏
页码:L794 / L796
页数:3
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