In situ radiation damage studies of optoelectronics in the ATLAS SemiConductor Tracker

被引：1
|
作者：
Dawson, I [1 ]
Gallop, B. [2 ]
Liu, J. [3 ]
Miyagawa, P. S. [1 ]
Phillips, P. W. [2 ]
Pownall, G. D. [3 ,5 ]
Robinson, D. [4 ]
Weidberg, A. R. [3 ]
机构：
[1] Univ Sheffield, Sheffield, S Yorkshire, England
[2] Rutherford Appleton Lab, Chilton, England
[3] Univ Oxford, Oxford, England
[4] Cavendish Lab, Cambridge, England
[5] DESY, Hamburg, Germany
来源：
JOURNAL OF INSTRUMENTATION | 2019年 / 14卷 / 07期
基金：
英国科学技术设施理事会;
关键词：
Photon detectors for UV; visible and IR photons (solid-state) (PIN diodes; APDs; Si-PMTs; G-APDs; CCDs; EBCCDs; EMCCDs; CMOS imagers; etc); Radiation-hard detectors; OPTICAL READOUT; HARDNESS; LIFETIME; PHOTODIODES; VCSELS;
D O I：
10.1088/1748-0221/14/07/P07014
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper presents results on in situ measurements of radiation damage for the on-detector optoelectronics for the ATLAS SemiConductor Tracker. The results come from proton-proton collisions in LHC during operation in 2016, 2017 and 2018. The results for both p-i-n diodes and VCSELs are given and compared to expectations from beam tests of devices from the same wafer, before the start of LHC operation. The VCSELs show evidence for some radiation damage as expected from earlier studies. The magnitude of the damage is compared with simple extrapolations from test beam data. The p-i-n diodes do show significant radiation damage as expected from test beam studies.
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页数：29
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