Radiation hardness and lifetime studies of photodiodes for the optical readout of the ATLAS semiconductor tracker

被引:19
|
作者
Charlton, DG
Dowell, JD
Homer, RJ
Jovanovic, P
Kenyon, IR
Mahout, G [1 ]
Shaylor, HR
Sibley, A
Wilson, JA
Bibby, JH
Gregor, IM
Wastie, RL
Weidberg, AR
机构
[1] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England
[2] Univ Oxford, Nucl & Astrophys Lab, Oxford OX1 3RH, England
关键词
epitaxial SiPIN photodiodes; neutron (1MeV) and proton (24 GeV) irradiation; dark current; responsivity; ageing; lifetime; ATLAS semiconductor tracker; ATLAS pixel detector; LHC;
D O I
10.1016/S0168-9002(00)00666-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A large sample (96) of epitaxial Si PIN photodiodes has been irradiated by similar to 1 MeV neutrons and 24 GeV protons with fluences up to 10(15) equivalent 1 MeV neutrons cm(-2) in order to test their suitability for use in the optical readout of the ATLAS semiconductor tracker and pixel detector at the CERN Large Hadron Collider. After an initial reduction of 30% the responsivity remains constant up to the maximum fluence. The rise and fall times are not significantly affected and remain below ins. Although the dark current increases linearly with increasing neutron fluence, its level remains below 100 nA which is negligible in comparison to the operating photocurrent which is above 100 muA. Enhanced ageing studies at 60 degreesC have also been carried out and no failure has occurred after an equivalent of 360 years of operation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:300 / 309
页数:10
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