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Unique topological surface states of full-Heusler topological crystalline insulators
被引:9
|作者:
Anh Pham
[1
]
Li, Sean
[1
]
机构:
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
基金:
澳大利亚研究理事会;
关键词:
EXPERIMENTAL REALIZATION;
PREDICTION;
D O I:
10.1103/PhysRevB.95.115124
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Our theoretical analysis reveals that a family of full-Heusler materials exhibit unique topological surface states with type-I and type-II Dirac quasiparticles. The type-I Dirac surface state is characterized by an enclosed Fermi surface, while the type-II Dirac surfaces occur at the touching of the electron and hole pockets. In addition, due to the layered nature of the full-Heusler crystals structured with a wide range of various elements, such structures induce multiple Dirac surface states with different Lifshitz transitions protected by more than one mirror plane.
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页数:7
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