Spin-dependent transport phenomena in a HEMT

被引：8
|
作者：
Bournel, A
Dollfus, P
Bruno, P
Hesto, P
机构：
[1] Univ Paris Sud, CNRS UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Max Planck Inst MVikrostrukturphys, D-06120 Halle, Germany
来源：
PHYSICA B | 1999年 / 272卷 / 1-4期
关键词：
HEMT; spin-orbit coupling; spin precession;
D O I：
10.1016/S0921-4526(99)00298-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
After reviewing the spin-dephasing mechanisms appearing in III-V heterostructures, we study theoretically spin-dependent transport in the channel of a original architecture of high electron mobility transistor, the spin-FET. We investigate particularly the spin relaxation associated to Rashba spin precession. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：331 / 334
页数：4
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