Room Temperature Wafer Bonding Using Surface Activated Bonding Method

被引：0
|
作者：
Taniyama, Shingo [1 ]
Wang, Ying-Hui [1 ]
Fujino, Masahisa [1 ]
Suga, Tadatomo [1 ]
机构：
[1] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源：
IEEE 9TH VLSI PACKAGING WORKSHOP IN JAPAN | 2008年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The bonding possibility of Si-Si/Au-Au/Cu-Cu wafers is confirmed at room temperature using surface activated bonding method. The surface condition and the thickness of surface contamination of Si, Au and Cu are evaluated using X-ray photoelectron spectroscopy. Various parameters, such as vacuum pressure, bonding time, bonding load, and bonding temperature, are studied in Si-Si wafer bonding. In the case of Au-Au and Cu-Cu wafer bonding, the influence of bonding temperature is investigated. Vacuum pressure is an important factor for room temperature Si-Si wafer bonding, whereas it is not sensitive in the case of Au-Au and Cu-Cu wafer bonding. The bonding energy of bonded Si-Si wafers can be obtained more than 1.95 j/m(2) under the vacuum pressure of 2.5x10(-6) Pa. Heating at 200 degrees C may improve the bonding strength of Au-Au and Cu-Cu wafers, however it is not useful in Si-Si wafer bonding. At room temperature, the bonding strength of the bonded Si-Si wafer reaches 16.0 MPa, and that of bonded Au-Au wafer reaches 12.4 MPa.
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页码：141 / 144
页数：4
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