Second-order topological insulator under strong magnetic field: Landau levels, Zeeman effect, and magnetotransport

被引:6
|
作者
Levitan, B. A. [1 ]
Pereg-Barnea, T.
机构
[1] McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, Canada
来源
PHYSICAL REVIEW RESEARCH | 2020年 / 2卷 / 03期
基金
加拿大自然科学与工程研究理事会;
关键词
28;
D O I
10.1103/PhysRevResearch.2.033327
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study a three-dimensional chiral second-order topological insulator (SOTI) subject to a magnetic field. Via its gauge field, the applied magnetic field influences the electronic motion on the lattice, and via the Zeeman effect, the field influences the electronic spin. We compare two approaches to the problem: an effective surface theory, and a full lattice calculation. The surface theory predicts a massive Dirac spectrum on each of the gapped surfaces, giving rise to Landau levels once the surfaces are pierced by magnetic flux. The surface theory qualitatively agrees with our lattice calculations, accurately predicting the surface gap as well as the spin and orbital components of the states at the edges of the surface Dirac bands. In the context of the lattice theory, we calculate the spectrum with and without magnetic field and find a deviation from the surface theory when a gauge field is applied. The energy of the lowest-lying Landau level is found closer to zero than is predicted by the surface theory, which leads to an observable magnetotransport signature: inside the surface gap, there exist different energy regions where either one or two chiral hinge modes propagate in either direction, quantizing the differential conductance to either one or two conductance quanta.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] The effect of electric potential on Landau levels for topological insulator surface states
    Liu, Yiman
    Zhou, Xiaoying
    Shao, Huaihua
    Zhou, Ma
    Zhou, Guanghui
    PHYSICA B-CONDENSED MATTER, 2014, 445 : 81 - 87
  • [32] Second-order phase transition of silicon from a band insulator to metal induced by strong magnetic fields
    Higuchi, Katsuhiko
    Hamal, Dipendra Bahadur
    Higuchi, Masahiko
    NEW JOURNAL OF PHYSICS, 2022, 24 (10):
  • [33] Second-Order Asymptotics for Communication Under Strong Asynchronism
    Li, Longguang
    Tchamkerten, Aslan
    IEEE TRANSACTIONS ON INFORMATION THEORY, 2019, 65 (05) : 2838 - 2849
  • [34] Clock-symmetric non-Hermitian second-order topological insulator
    Ezawa, Motohiko
    EUROPEAN PHYSICAL JOURNAL B, 2022, 95 (06):
  • [35] Clock-symmetric non-Hermitian second-order topological insulator
    Motohiko Ezawa
    The European Physical Journal B, 2022, 95
  • [36] Inversely Designed Second-Order Photonic Topological Insulator With Multiband Corner States
    Chen, Yafeng
    Lan, Zhihao
    Zhu, Jie
    PHYSICAL REVIEW APPLIED, 2022, 17 (05)
  • [37] Second-order elastic topological insulator with valley-selective corner states
    An, Shuowei
    Liu, Tuo
    Fan, Haiyan
    Gao, He
    Gu, Zhongming
    Liang, Shanjun
    Huang, Sibo
    Zheng, Yi
    Chen, Yafeng
    Cheng, Li
    Zhu, Jie
    INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES, 2022, 224
  • [38] Floquet second-order topological Anderson insulator hosting corner localized modes
    Ghosh, Arnob Kumar
    Nag, Tanay
    Saha, Arijit
    PHYSICAL REVIEW B, 2024, 110 (12)
  • [39] Engineering Quantum Anomalous Hall Effect with a High Chern Number in Nonmagnetic Second-Order Topological Insulator
    Feng, Xiaoran
    Bai, Yingxi
    Chen, Zhiqi
    Dai, Ying
    Huang, Baibiao
    Niu, Chengwang
    ADVANCED FUNCTIONAL MATERIALS, 2025,
  • [40] Straight-angled corner state in acoustic second-order topological insulator
    Wang, Zhenyu
    Li, Houyin
    Wang, Zhennan
    Liu, Zhenzhen
    Luo, Jinlong
    Huang, Jian
    Wang, Xiaoyan
    Wang, Rongli
    Yang, Hai
    PHYSICAL REVIEW B, 2021, 104 (16)