Low-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

被引：97

作者：

Toko, K. ^{[1
]}

Numata, R. ^{[1
]}

Oya, N. ^{[1
]}

Fukata, N. ^{[2
]}

Usami, N. ^{[3
]}

Suemasu, T. ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Nagoya Univ, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期

关键词：

AMORPHOUS-GE; GERMANIUM; GROWTH; GLASS;

D O I：

10.1063/1.4861890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 degrees C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10 mu m and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180 degrees C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates. (C) 2014 AIP Publishing LLC.

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页数：4

共 42 条

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