Persistent photoconductivity in InGaP/GaAs heterostructures

被引：13
|
作者：
Fan, JC [1 ]
Wang, JC [1 ]
Chen, YF [1 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 19期
关键词：
D O I：
10.1063/1.125207
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoconductivity spectra have been investigated in InGaP/GaAs heterostructures, and persistent photoconductivity (PPC) has been observed. Through a detailed study of the dependence on excitation wavelengths and the decay kinetics, we identify that the separation of electrons and holes due to the macroscopic potential barrier between the heterointerface and the substrate is the origin of the PPC effect. In addition, we found that the PPC effect can be reduced and the photosensitivity can be enhanced after hydrogenation. We suggest that this behavior can be interpreted by the fact that the incorporation of atomic hydrogen produces donor neutralization and passivates the activity of defective bonds, thus reducing the potential barrier for the recombination of electrons and holes and enhances the photoresponse. (C) 1999 American Institute of Physics. [S0003-6951(99)05645-4].
引用
收藏
页码：2978 / 2980
页数：3
相关论文
共 50 条
  • [41] The effect of persistent photoconductivity in undoped GaInP/GaAs quantum wells
    Ahoujja, M
    Elhamri, S
    Newrock, RS
    Mast, DB
    Mitchel, WC
    Razeghi, M
    Erdtman, M
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 18 (02) : 147 - 152
  • [42] Persistent IR photoconductivity in InAs/GaAs structures with QD layers
    Kul'bachinskii, V. A.
    Rogozin, V. A.
    Kytin, V. G.
    Lunin, R. A.
    Zvonkov, B. N.
    Dashevsky, Z. M.
    Casian, V. A.
    SEMICONDUCTORS, 2006, 40 (02) : 210 - 216
  • [43] Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiation
    Zardas, GE
    Yannakopoulos, PH
    Ziska, M
    Symeonides, C
    Euthymiou, PC
    Csabay, O
    MICROELECTRONICS JOURNAL, 2005, 36 (01) : 1 - 4
  • [44] Persistent IR photoconductivity in InAs/GaAs structures with QD layers
    V. A. Kul’bachinskiĭ
    V. A. Rogozin
    V. G. Kytin
    R. A. Lunin
    B. N. Zvonkov
    Z. M. Dashevsky
    V. A. Casian
    Semiconductors, 2006, 40 : 210 - 216
  • [45] Physical mechanism for saturation of persistent photoconductivity in a GaAs-AlAs/GaAs single heterojunction
    Prasad, S
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) : 454 - 464
  • [46] Physical origin of negative persistent photoconductivity in a GaAs-AlAs/GaAs single heterojunction
    Prasad, S
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (09) : 4907 - 4916
  • [47] Physical origin of negative persistent photoconductivity in a GaAs-AlAs/GaAs single heterojunction
    1600, American Institute of Physics Inc. (89):
  • [48] Persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures
    Kraak, W
    Minina, NY
    Savin, AM
    Ilievsky, AA
    Berman, IV
    Sorensen, CB
    NANOTECHNOLOGY, 2001, 12 (04) : 577 - 580
  • [49] TRANSIENT AND PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS AND SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES
    SCHUBERT, EF
    KNECHT, J
    PLOOG, K
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (09): : L215 - L221
  • [50] REDUCED LIGHT SENSITIVITY AND PERSISTENT PHOTOCONDUCTIVITY IN NOVEL MODULATION DOPED HETEROSTRUCTURES INCORPORATING AN N GAAS/ALGAAS SUPERLATTICE AS THE HIGH BANDGAP MATERIAL
    PEARAH, P
    HENDERSON, T
    KLEM, J
    MASSELINK, WT
    CHAND, N
    MORKOC, H
    JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (01) : 1 - 7
12345