Comparison of microwave dielectric properties of between (001) and (011) ferroelectric Ba1-xSrxTiO3 thin films grown by pulsed laser deposition

被引：0
|
作者：
Moon, SE [1 ]
Kim, EK [1 ]
Lee, SJ [1 ]
Han, SK [1 ]
Kang, KY [1 ]
Kim, WJ [1 ]
机构：
[1] Elect & Telecommun Res Inst, Wireless Commun Devices Dept, Taejon 305350, South Korea
来源：
MATERIALS ISSUES FOR TUNABLE RF AND MICROWAVE DEVICES III | 2002年 / 720卷
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effects of anisotropic dielectric properties of ferroelectric Ba1-xSrxTiO3 (BST) films on the characteristics of phase shifter have been studied in microwave regions at room temperature. Ferroelectric BST films with (001) and (011) orientation were epitaxially grown on (001) and (011) MgO substrates, respectively, by pulsed laser deposition method. The structures of BST films were investigated using x-ray diffraction measurement. The microwave properties of orientation engineered BST films were investigated using coplanar waveguide transmission lines that were fabricated on BST films using a thick metal layer by photolithography and etching process. The measured differential phase shift and insertion loss (S-21) for (011) BST films are larger than those for (001) BST films. Dielectric constants of the ferroelectric BST films are calculated from the measured S-21 using a modified conformal-mapping model.
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页码：79 / 84
页数：6
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