Initial assessment of multilayer silicon detectors for hard X-ray imaging

被引:3
|
作者
Li, Xuan [1 ]
Chu, Pinghan [1 ]
Wang, Zhehui [1 ]
O'Shaughnessy, Christopher M. [1 ]
Morris, Chris [1 ]
Demarteau, Marcel [2 ]
Wagner, Robert [2 ]
Xie, Junqi [2 ]
Xia, Lei [2 ]
Zhu, Ren-Yuan [3 ]
Zhang, Liyuan [3 ]
Hu, Chen [3 ]
Adams, Bernhard [4 ]
Katsoudas, John [5 ]
Ding, Yujia [5 ]
Segre, Carlo [5 ]
Smith, Thomas A. [6 ]
Shih, Yanhua [6 ]
机构
[1] Los Alamos Natl Lab, Phys Div, Los Alamos, NM 87545 USA
[2] Argonne Natl Lab, High Energy Phys Div, Lemont, IL 60439 USA
[3] CALTECH, Phys Dept, Pasadena, CA 91125 USA
[4] Incom Inc, Charlton, MA 01507 USA
[5] IIT, Chicago, IL 60616 USA
[6] Univ Maryland Baltimore Cty, Baltimore, MD 21250 USA
关键词
Silicon detector; Multilayer; Hard X-ray imaging;
D O I
10.1016/j.nima.2019.162414
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon detectors with lower material budget, ultrafast readout and radiation hardness are under developments. These unique features make pixelized silicon sensors a good option for hard X-ray imaging. To verify the performance of spatial resolution and energy sensitivity of silicon sensors to hard X-rays, a two layer setup of Pixelink PL-D725MU sensors has been tested at the Argonne National Laboratory Advanced Photon Source (APS) ID-10 sector with 29.2 keV high photon flux (4.5 x 10(8) to 4.5 x 10(10) photons per second) X-rays. Better than 3 mu m spatial resolution and clear energy characterization have been achieved by both layers. Commercial CMOS sensors with superior spatial resolution could be used for phase contrast imaging in current synchrotrons. These studies pave the path for future multilayer ultrafast silicon sensor development with ns to sub-ns readout speeds in hard X-ray imaging at synchrotrons and XFEL beamlines.
引用
收藏
页数:8
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