Resonant tunneling through a self-assembled Si quantum dot

被引：91
|
作者：
Fukuda, M
Nakagawa, K
Miyazaki, S
Hirose, M
机构：
[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 17期
关键词：
D O I：
10.1063/1.118816
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nanometer-scale Si quantum dots have been spontaneously fabricated on SiO2 by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/l nm-SiO2/a single Si quantum dot/l nm-SiO2/n(+)-Si(100) double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10. (C) 1997 American Institute of Physics.
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页码：2291 / 2293
页数：3
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