Silicon Heterojunction Solar Cells with Cu2O:N as p-type Layer

被引：0
|
作者：
Kim, Jinwoo [1 ]
Takiguchi, Yuki [2 ]
Nakada, Kazuyoshi [1 ]
Miyajima, Shinsuke [1 ]
机构：
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan
来源：
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
关键词：
photovoltaic cells; silicon; TRANSITION-METAL OXIDES; HOLE-SELECTIVE CONTACT; DOPANT-FREE; CRYSTALLINE SILICON; PERFORMANCE; MOOX;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
We investigated nitrogen doped cuprous oxide (Cu2O:N) as a p-type emitter for silicon heterojunction (SHJ) solar cells. The SHJ solar cells with p-type Cu2O:N emitter were fabricated to assess the potential of p-type Cu2O:N. An opencircuit voltage of 0.568 V, a short-circuit current density of 34.1 mA/cm(2), a fill factor of 0.439, and a conversion efficiency of 8.50% were obtained from the fabricated solar cells. The poor open circuit voltage and fill factor are probably due to the interface between intrinsic amorphous silicon oxide passivation layer and the p-type Cu2O:N.
引用
收藏
页码：2145 / 2150
页数：6
相关论文
共 50 条
  • [31] Comparison of amorphous/crystalline heterojunction solar cells based on n- and p-type crystalline silicon
    Tucci, M
    della Noce, M
    Bobeico, E
    Roca, F
    de Cesare, G
    Palma, E
    THIN SOLID FILMS, 2004, 451 : 355 - 360
  • [32] P-type silicon heterojunction solar cells with different interfaces and surface structures
    Bilyalov, R
    Ulyashin, A
    Scherff, M
    Meusinger, K
    Poortmans, J
    Fahrner, W
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1139 - 1142
  • [33] >21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared
    Descoeudres, Antoine
    Holman, Zachary C.
    Barraud, Loris
    Morel, Sophie
    De Wolf, Stefaan
    Ballif, Christophe
    IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (01): : 83 - 89
  • [34] Role of absorber and buffer layer thickness on Cu2O/TiO2 heterojunction solar cells
    Mathur, A. S.
    Singh, Prem Pratap
    Upadhyay, Sachin
    Yadav, Neetika
    Singh, K. S.
    Singh, Digpratap
    Singh, B. P.
    SOLAR ENERGY, 2022, 233 : 287 - 291
  • [35] P-type Transparent Cu2O:B Hole Selective Thin Layer for c-Si Solar Cell
    Markose, Kurias K.
    Shaji, Manu
    Antony, Aldrin
    Jayaraj, M. K.
    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2020, : 2655 - 2657
  • [36] Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O
    Dimopoulos, Theodoros
    Wibowo, Rachmat Adhi
    Edinger, Stefan
    Wolf, Maximilian
    Fix, Thomas
    NANOMATERIALS, 2024, 14 (03)
  • [37] Underpotential deposition of nickel on electrodeposited p-type Cu2O films and its effects on photocatalytic activities and stability of p-type Cu2O films
    Budin, Noah
    Hilston, Samantha
    Fillinger, Akiko
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 253
  • [38] Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiOx Window Layer
    Hsu, Chia-Hsun
    Zhang, Xiao-Ying
    Lin, Hai-Jun
    Lien, Shui-Yang
    Cho, Yun-Shao
    Ye, Chang-Sin
    ENERGIES, 2019, 12 (13)
  • [39] Doped Cu2O / n-Si Heterojunction Solar Cell
    Mukherjee, Rudra
    Srivastava, Pranjal
    Ravindra, Pramod
    Avasthi, Sushobhan
    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 2162 - 2165
  • [40] Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors
    Bonavolonta, Carmela
    Vettoliere, Antonio
    Pannico, Marianna
    Crisci, Teresa
    Ruggiero, Berardo
    Silvestrini, Paolo
    Valentino, Massimo
    SENSORS, 2024, 24 (18)
12345