Magnetotransport properties of p-type carbon-doped ZnO thin films

被引：80
|
作者：
Herng, T. S. [1 ]
Lau, S. P. [2 ]
Wang, L. [3 ]
Zhao, B. C. [3 ]
Yu, S. F. [1 ]
Tanemura, M. [4 ]
Akaike, A. [4 ]
Teng, K. S. [5 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[4] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[5] Swansea Univ, Sch Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA2 8PP, W Glam, Wales
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期
关键词：
ROOM-TEMPERATURE; FERROMAGNETISM;
D O I：
10.1063/1.3176434
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO: C films was found to be around 1.35 mu(B) per carbon atom. The ZnO: C films showed p-type conduction with a hole concentration of similar to 5 X 10(17) cm(-3). In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO: C films. The magnetotransport properties of the ZnO: C suggested that the films possessed charge carrier spin polarization. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3176434]
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页数：3
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