Magnetotransport properties of p-type carbon-doped ZnO thin films

被引：80
|
作者：
Herng, T. S. [1 ]
Lau, S. P. [2 ]
Wang, L. [3 ]
Zhao, B. C. [3 ]
Yu, S. F. [1 ]
Tanemura, M. [4 ]
Akaike, A. [4 ]
Teng, K. S. [5 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[4] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[5] Swansea Univ, Sch Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA2 8PP, W Glam, Wales
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期
关键词：
ROOM-TEMPERATURE; FERROMAGNETISM;
D O I：
10.1063/1.3176434
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO: C films was found to be around 1.35 mu(B) per carbon atom. The ZnO: C films showed p-type conduction with a hole concentration of similar to 5 X 10(17) cm(-3). In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO: C films. The magnetotransport properties of the ZnO: C suggested that the films possessed charge carrier spin polarization. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3176434]
引用
收藏
页数：3
相关论文
共 50 条
  • [1] P-type carbon-doped ZnO thin films by MOCVD
    Tan, S. T.
    Sun, X. W.
    Lo, G. Q.
    Zhang, X. H.
    Chua, S. J.
    AD'07: Proceedings of Asia Display 2007, Vols 1 and 2, 2007, : 662 - 662
  • [2] p-type conduction in unintentional carbon-doped ZnO thin films
    Tan, S. T.
    Sun, X. W.
    Yu, Z. G.
    Wu, P.
    Lo, G. Q.
    Kwong, D. L.
    APPLIED PHYSICS LETTERS, 2007, 91 (07)
  • [3] Stable ferromagnetism in p-type carbon-doped ZnO nanoneedles
    Herng, T. S.
    Lau, S. P.
    Wei, C. S.
    Wang, L.
    Zhao, B. C.
    Tanemura, M.
    Akaike, Y.
    APPLIED PHYSICS LETTERS, 2009, 95 (13)
  • [4] Properties of p-type ZnO thin films with different orientations
    戴丽萍
    王姝娅
    钟志亲
    张国俊
    OptoelectronicsLetters, 2014, 10 (02) : 111 - 114
  • [5] Effect of boron on nitrogen doped p-type ZnO thin films
    Zhao, Peng-Cheng
    Zhang, Zhen-Zhong
    Yao, Bin
    Li, Bing-Hui
    Wang, Shuang-Peng
    Jiang, Ming-Ming
    Zhao, Dong-Xu
    Shan, Chong-Xin
    Liu, Lei
    Shen, De-Zhen
    Faguang Xuebao/Chinese Journal of Luminescence, 2014, 35 (07): : 795 - 799
  • [6] P-type conduction in sputtered ZnO thin films doped by nitrogen
    Shtereva, K.
    Tvarozek, V.
    Novotny, I.
    Kovac, J.
    Sutta, P.
    Vincze, A.
    2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2006, : 357 - +
  • [7] Structural and electrical properties of p-type ZnO thin films
    Hamid, H. Abdul
    Abdullah, M. J.
    Aziz, A. Abdul
    CURRENT ISSUES OF PHYSICS IN MALAYSIA, 2008, 1017 : 134 - 138
  • [8] Properties of p-type ZnO thin films with different orientations
    Dai L.-P.
    Wang S.-Y.
    Zhong Z.-Q.
    Zhang G.-J.
    Dai, L.-P. (dlp@uestc.edu.cn), 1600, Springer Verlag (10): : 111 - 114
  • [9] HEAVILY CARBON-DOPED P-TYPE INGAAS BY MOMBE
    TOKUMITSU, E
    SHIRAKASHI, J
    QI, M
    YAMADA, T
    NOZAKI, S
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 301 - 305
  • [10] Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films
    Wang, Yipeng
    Zhou, Jianqing
    Lu, Qian
    Liu, Lilong
    Zhang, Xin
    Wu, Xiaojing
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04) : 0411031 - 0411034
12345