Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film

被引：19
|
作者：
Liang, Dandan [1 ]
Li, Xiaoping [1 ]
Wang, Junshuai [1 ]
Wu, Liangchen [1 ]
Chen, Peng [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2018年 / 145卷
基金：
美国国家科学基金会;
关键词：
Resistive switching; ZnO/BiFeO3/ZnO; Light-controlled; MEMORY; NANOPARTICLES; ARRAYS;
D O I：
10.1016/j.sse.2018.04.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
ZnO/BiFeO3/ZnO multilayer was fabricated on silicon (Si) substrate by radio-frequency magnetron sputtering system. The resistive switching characteristics in ZnO/BiFeO3/ZnO devices are observed, and the resistive switching behavior can be modulated by white light.
引用
收藏
页码：46 / 48
页数：3
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