Possibility of spin-polarized transport in edge fluorinated armchair boron nitride nanoribbons
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作者:
Rai, Hari Mohan
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Indian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Rai, Hari Mohan
[1
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Saxena, Shailendra K.
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Indian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Saxena, Shailendra K.
[1
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Mishra, Vikash
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Indian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Mishra, Vikash
[1
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Late, Ravikiran
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Indian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Late, Ravikiran
[1
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Kumar, Rajesh
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Indian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Kumar, Rajesh
[1
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Sagdeo, Pankaj R.
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Indian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Sagdeo, Pankaj R.
[1
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Jaiswal, Neeraj K.
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PDPM Indian Inst Informat Technol Design & Mfg, Discipline Phys, Jabalpur 482005, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Jaiswal, Neeraj K.
[2
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Srivastava, Pankaj
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ABV Indian Inst Informat Technol & Management, Computat Nanosci & Technol Lab CNTL, Gwalior 474015, IndiaIndian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
Srivastava, Pankaj
[3
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机构:
[1] Indian Inst Technol, Discipline Phys, Mat Res Lab, Indore 452017, MP, India
[2] PDPM Indian Inst Informat Technol Design & Mfg, Discipline Phys, Jabalpur 482005, India
[3] ABV Indian Inst Informat Technol & Management, Computat Nanosci & Technol Lab CNTL, Gwalior 474015, India
We predict the possibility of spin based electronic transport in edge fluorinated armchair boron nitride nanoribbons (ABNNRs). The structural stability, electronic and magnetic properties of these edge fluorinated ABNNRs have been systematically analyzed by means of first-principles calculations within the local spin-density approximation (LSDA). Regardless of their width, ABNNRs with F-passivation at only the edge-B atoms are found to be thermodynamically stable and half-metallic in nature. The spin polarized states are found to be similar to 0.4 eV more stable than that of spin compensated states. Further, upto 100% spin polarization is expected in ABNNRs with F-passivation at only the edge-B atoms as indicated by the giant splitting of spin states which is observed in the corresponding band structures, DOS and transmission spectrum. The existence of half-metallicity is attributed to the localization of electronic charge at unpassivated edge-N atoms as revealed from the analysis of Bloch states and projected density of states (PDOS). Importantly, present stability analysis suggests that the possibility of experimental realization of spin polarized transport in ABNNRs is more promising via F-passivation of ribbon edges than that of H-passivation. The observed half-metallic nature and large difference in the energies (similar to 0.4 eV) of spin polarized and spin compensated states projects these half-metallic ABNNRs as potential candidates for inorganic spintronic applications.
机构:
Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Zhang, Qingtian
Chan, K. S.
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机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 5183000, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Chan, K. S.
Li, Jingbo
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
机构:
Armament Res Dev & Engn Ctr, Picatinny Arsenal, NJ 07806 USAArmament Res Dev & Engn Ctr, Picatinny Arsenal, NJ 07806 USA
Miller, Michael
Owens, Frank J.
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机构:
CUNY Hunter Coll, Dept Phys, Hunter Coll, NY 10065 USA
CUNY, Grad Ctr, New York, NY 10065 USAArmament Res Dev & Engn Ctr, Picatinny Arsenal, NJ 07806 USA
机构:
Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Hunan Normal Univ, Key Lab Low Dimens Struct & Quantum Manipulat, Minist Educ, Changsha 410081, Hunan, Peoples R ChinaHunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Zhou, Benhu
Chen, Xiongwen
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机构:
Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Hunan Normal Univ, Key Lab Low Dimens Struct & Quantum Manipulat, Minist Educ, Changsha 410081, Hunan, Peoples R ChinaHunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Chen, Xiongwen
Zhou, Benliang
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机构:
Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Hunan Normal Univ, Key Lab Low Dimens Struct & Quantum Manipulat, Minist Educ, Changsha 410081, Hunan, Peoples R ChinaHunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Zhou, Benliang
Ding, Kai-He
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机构:
Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410076, Hunan, Peoples R ChinaHunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Ding, Kai-He
Zhou, Guanghui
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机构:
Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
Hunan Normal Univ, Key Lab Low Dimens Struct & Quantum Manipulat, Minist Educ, Changsha 410081, Hunan, Peoples R China
Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110015, Peoples R ChinaHunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China