Optoelectronic Properties in the Terahertz of Femtosecond-laser-ablated GaAs

被引:0
|
作者
Madeo, J. [1 ]
Margiolakis, A. [1 ,2 ]
Zhao, Z. -Y. [3 ]
Hale, P. J. [1 ]
Man, M. K. L. [1 ]
Zhao, Q. -Z. [4 ]
Peng, W. [5 ]
Shi, W. -Z. [3 ]
Dani, K. M. [1 ]
Mariserla, Bala Murali Krishna [1 ]
机构
[1] Okinawa Inst Sci & Technol Grad Univ, Femtosecond Spect Unit, Onna, Okinawa, Japan
[2] Univ Crete, Dept Phys, Iraklion, Greece
[3] Shanghai Normal Univ, Dept Phys, Shanghai, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai, Peoples R China
[5] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices.
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页码:2390 / 2390
页数:1
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