Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS) has been reported as a successful functional material in a broad variety of applications. One of the most important advantages of PEDOT:PSS is its water-solubility, which enables simple and environmental friendly manufacturing processes. Unfortunately, this also implies that pristine PEDOT:PSS films are unsuitable for applications in aqueous environments. To reach stability in polar solvents, (3-glycidyloxypropyl)trimethoxysilane (GOPS) is typically used to cross-link PEDOT:PSS. Although this strategy is widely used, its mechanism and effect on PEDOT:PSS performance have not been articulated yet. Here, we present a broad study that provides a better understanding of the effect of GOPS on the electrical and electronic properties of PEDOT:PSS. We show that the GOPS reacts with the sulfonic acid group of the excess PSS, causing a change in the PEDOT:PSS film morphology, while the oxidation level of PEDOT remains unaffected. This is at the origin of the observed conductivity changes. (c) 2017 Wiley Periodicals, Inc.
机构:
Institute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, ChinaInstitute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Zhang, Ya-Ping
Zhang, Jian-Jun
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Institute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, ChinaInstitute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Zhang, Jian-Jun
Geng, Xin-Hua
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Institute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, ChinaInstitute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Geng, Xin-Hua
Zhao, Ying
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Institute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, ChinaInstitute of Photo-electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
机构:
Yeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea
Daegu Gyeongbuk Inst Sci & Technol, Nano & Bio Res Div, Daegu 711873, South KoreaYeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea
Hwang, Jun Sung
Oh, Tae Hwan
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Yeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South KoreaYeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea
Oh, Tae Hwan
Kim, Se Hyun
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Yeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South KoreaYeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea
Kim, Se Hyun
Han, Sung Soo
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Yeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South KoreaYeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea
Han, Sung Soo
Lee, Sung Jun
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Daegu Gyeongbuk Inst Sci & Technol, Nano & Bio Res Div, Daegu 711873, South KoreaYeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea
Lee, Sung Jun
Lee, Se Geun
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Daegu Gyeongbuk Inst Sci & Technol, Nano & Bio Res Div, Daegu 711873, South KoreaYeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea
Lee, Se Geun
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Lee, Young Jae
Jang, Seung Soon
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAYeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea