Intense terahertz field effects on photoexcited carrier dynamics in gated graphene

被引：20
|
作者：
Hafez, Hassan A. [1 ]
Levesque, Pierre L. [2 ]
Al-Naib, Ibraheem [3 ,4 ]
Dignam, Marc M. [3 ]
Chai, Xin [1 ]
Choubak, Saman [5 ]
Desjardins, Patrick [5 ]
Martel, Richard [2 ]
Ozaki, Tsuneyuki [1 ]
机构：
[1] INRS, Adv Laser Light Source, INRS EMT, Varennes, PQ J3X 1S2, Canada
[2] Univ Montreal, Dept Chem, Montreal, PQ H3C 3J7, Canada
[3] Queens Univ, Dept Phys Engn Phys & Astron, Kingston, ON K7L 3N6, Canada
[4] Univ Dammam, Coll Engn, Dept Biomed Engn, Dammam 31441, Saudi Arabia
[5] Polytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 25期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1063/1.4938081
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study nonlinear effects of intense terahertz (THz) field on photoexcited carrier dynamics in gated monolayer graphene. By employing optical-pump/intense-THz-probe spectroscopy on lightly doped graphene, we observe a crossover from negative to positive photo-induced THz differential transmission as the THz probe field is increased. We attribute this qualitative change in the response to a crossover from a regime where the photo-induced increase in the carrier density dominates the differential response to one where a THz-field-induced increase in the scattering rate dominates. (C) 2015 AIP Publishing LLC.
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页数：5
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