Ultrafast carrier dynamics and terahertz conductivity of photoexcited GaAs under electric field

被引：45
|
作者：
Zhou, Qing-li [1 ]
Shi, Yulei [1 ]
Jin, Bin [1 ]
Zhang, Cunlin [1 ]
机构：
[1] Capital Normal Univ, Dept Phys, Beijing Key Lab Terahertz Spect & Imaging, Key Lab Terahertz Optoelect,Minist Educ, Beijing 100048, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期
关键词：
III-V semiconductors - Semiconducting gallium - Gallium arsenide - Optical pumping;
D O I：
10.1063/1.2980026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ultrafast carrier dynamics and terahertz conductivity in semi-insulating GaAs have been investigated under electric field (E) by using optical pump-terahertz probe technique. The measurements indicate that the terahertz transmission change induced by the pump pulses at high E is smaller than that without E. We attribute this phenomenon to carrier scattering into the L valley, which leads to a drop in carrier mobility. The calculated transient photoconductivities fit well with the Drude-Smith model, being consistent with our intervalley scattering model. (C) 2008 American Institute of Physics.
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