Pulsed laser deposition of thin PrxOy films on Si(100)

被引：34
|
作者：
Wolffram, D
Ratzke, M
Kappa, M
Montenegro, MJ
Döbeli, M
Lippert, T
Reif, J
机构：
[1] IHP, BTU JointLab, D-03044 Cottbus, Germany
[2] Brandenburg Tech Univ Cottbus, D-03044 Cottbus, Germany
[3] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 109卷 / 1-3期
关键词：
high-k gate dielectric material; praseodymium oxide; pulsed laser deposition;
D O I：
10.1016/j.mseb.2003.10.022
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
PrxOy thin films have been grown by pulsed laser deposition (PLD) on Si(1 0 0) surfaces. The chemical composition of layers with different thickness was investigated using core level (Pr 3d, O 1s, Si 2p) X-ray photoelectron emission spectroscopy (XPS). The line shape analysis of emission spectra does not indicate any interfacial mixing but suggests the formation of a silicate (Si-O-Pr) at the PrxOy/Si interface. Although Pr6O11 was used as target material, XPS spectra have shown that the PrxOy films consist of two Pr-oxides (Pr2O3, Pr6O11). The intensity ratio of the two Pr-oxides did not change with increasing film thickness but the Pr and O core levels are slightly shifted toward lower binding energy. Using Rutherford backscattering spectroscopy (RBS) we found a much too high O/Pr intensity ratio for PrxOy layers grown at room temperature. For layers grown at 650degreesC the ratio was within the expected range. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码：24 / 29
页数：6
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