Three-dimensional topography simulation for deposition and etching processes using a level set method

被引：0

作者：

Sheikholeslami, A ^{[1
]}

Heitzinger, C ^{[1
]}

Grasser, T ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

引用

页码：241 / 244

页数：4

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