Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

被引：427

作者：

Park, Jin-Seong ^{[1
]}

Kim, Tae-Woong ^{[1
]}

Stryakhilev, Denis ^{[1
]}

Lee, Jae-Sup ^{[1
]}

An, Sung-Guk ^{[1
]}

Pyo, Yong-Shin ^{[1
]}

Lee, Dong-Bum ^{[1
]}

Mo, Yeon Gon ^{[1
]}

Jin, Dong-Un ^{[1
]}

Chung, Ho Kyoon ^{[1
]}

机构：

[1] Samsung Mobile Display Co LTD, Ctr Technol, Yongin 449577, Kyungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

D O I：

10.1063/1.3159832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (mu(FE)) of 15.1 cm(2)/V s, subthreshold slope of 0.25 V/dec, threshold voltage (V-TH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 mu m thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3159832]

引用

页数：3

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