Geometrical control of pure spin current induced domain wall depinning

被引:9
|
作者
Pfeiffer, A. [1 ,2 ]
Reeve, R. M. [1 ]
Voto, M. [3 ]
Savero-Torres, W. [4 ,5 ]
Richter, N. [1 ,2 ]
Vila, L. [4 ,5 ]
Attane, J. P. [4 ,5 ]
Lopez-Diaz, L. [3 ]
Klaeui, Mathias [1 ,2 ]
机构
[1] Johannes Gutenberg Univ Mainz, Inst Phys, D-55099 Mainz, Germany
[2] Grad Sch Excellence Mat Sci Mainz, Staudinger Weg 9, D-55128 Mainz, Germany
[3] Univ Salamanca, Dept Fis Aplicada, Salamanca 37008, Spain
[4] Univ Grenoble Alpes, Inst Nanosci & Cryogenie, F-38000 Grenoble, France
[5] CEA, F-38000 Grenoble, France
基金
欧洲研究理事会; 欧盟第七框架计划;
关键词
domain wall motion; pure spin current; geometrical constrictions in nanostructures; ACCUMULATION;
D O I
10.1088/1361-648X/aa5516
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigate the pure spin-current assisted depinning of magnetic domain walls in half ring based Py/Al lateral spin valve structures. Our optimized geometry incorporating a patterned notch in the detector electrode, directly below the Al spin conduit, provides a tailored pinning potential for a transverse domain wall and allows for a precise control over the magnetization configuration and as a result the domain wall pinning. Due to the patterned notch, we are able to study the depinning field as a function of the applied external field for certain applied current densities and observe a clear asymmetry for the two opposite field directions. Micromagnetic simulations show that this can be explained by the asymmetry of the pinning potential. By direct comparison of the calculated efficiencies for different external field and spin current directions, we are able to disentangle the different contributions from the spin transfer torque, Joule heating and the Oersted field. The observed high efficiency of the pure spin current induced spin transfer torque allows for a complete depinning of the domain wall at zero external field for a charge current density of 6 . 10(11) A m(-2), which is attributed to the optimal control of the position of the domain wall.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Magnetic domain wall depinning assisted by spin wave bursts
    Woo S.
    Delaney T.
    Beach G.S.D.
    Nature Physics, 2017, 13 (5) : 448 - 454
  • [22] Current-induced zero-field domain wall depinning in cylindrical nanowires
    Julian A. Moreno
    Jurgen Kosel
    Scientific Reports, 12
  • [23] Magnetic domain wall depinning assisted by spin wave bursts
    Woo, Seonghoon
    Delaney, Tristan
    Beach, Geoffrey S. D.
    NATURE PHYSICS, 2017, 13 (05) : 448 - 454
  • [24] Current-induced zero-field domain wall depinning in cylindrical nanowires
    Moreno, Julian A.
    Kosel, Jurgen
    SCIENTIFIC REPORTS, 2022, 12 (01)
  • [25] Domain wall motion induced by the magnonic spin current
    Wang, Xi-guang
    Guo, Guang-hua
    Nie, Yao-zhuang
    Zhang, Guang-fu
    Li, Zhi-xiong
    PHYSICAL REVIEW B, 2012, 86 (05):
  • [26] Current Driven Domain Wall Depinning in Notched Permalloy Nanowires
    Kurniawan, Candra
    Djuhana, Dede
    INTERNATIONAL SYMPOSIUM ON FRONTIER OF APPLIED PHYSICS (ISFAP) 2015, 2016, 1711
  • [27] Current-induced domain wall depinning and magnetoresistance in La0.7Sr0.3MnO3 planar spin valves
    Ruotolo, A.
    Oropallo, A.
    Granozio, F. Miletto
    Pepe, G. P.
    Perna, P.
    di Uccio, U. Scotti
    Pullini, D.
    APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [28] Current-induced vortex domain wall depinning in ferromagnetic nanowires with artificial linear defect
    Yu-Cheng Zhou
    Chun-Lian Hu
    Yan-Fang Zhang
    Applied Physics A, 2015, 121 : 297 - 300
  • [29] Thermal effects in spin-torque assisted domain wall depinning
    Beyersdorff, Bjoern
    Hankemeier, Sebastian
    Roessler, Stefan
    Stark, Yuliya
    Hoffmann, Germar
    Froemter, Robert
    Oepen, Hans Peter
    Krueger, Benjamin
    PHYSICAL REVIEW B, 2012, 86 (18):
  • [30] Current-induced vortex domain wall depinning in ferromagnetic nanowires with artificial linear defect
    Zhou, Yu-Cheng
    Hu, Chun-Lian
    Zhang, Yan-Fang
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 121 (01): : 297 - 300