Effects of the Duty Ratio on the Niobium Oxide Film Deposited by Pulsed-DC Magnetron Sputtering Methods

被引：2
|
作者：
Eom, Ji Mi [1 ]
Oh, Hyun Gon [2 ]
Cho, Il Hwan [2 ]
Kwon, Sang Jik [1 ]
Cho, Eou Sik [1 ]
机构：
[1] Gachon Univ, Dept Elect Engn, Songnam 461701, South Korea
[2] Myongji Univ, Dept Elect Engn, Yongin 449728, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 11期
关键词：
Niobium Oxide (Nb2O5); Pulsed-DC Sputtering; Duty Ratio; Reverse Voltage Time; Schottky Barrier; THIN-FILMS;
D O I：
10.1166/jnn.2013.7816
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 mu s at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics.
引用
收藏
页码：7760 / 7765
页数：6
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