Spin Hall effect in AA-stacked bilayer graphene

被引:10
|
作者
Dyrdal, Anna [1 ]
Barnas, Jozef [1 ,2 ]
机构
[1] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland
[2] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
关键词
Graphene; AA-stacking; Spin Hall effect; Spin Nernst effect;
D O I
10.1016/j.ssc.2014.02.023
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The intrinsic spin Hall effect in the AA-stacked bilayer graphene is studied theoretically. The low energy electronic spectrum for slates in the vicinity of the Dirac points is obtained from the corresponding k . p Hamiltonian. The spin Hall conductivity in the linear response regime is determined in terms of the Green function formalism. Conditions for the existence of spin Hall insulator phase are also analyzed. It is shown that the spin Hall insulator phase can exist for a sufficiently large spin-orbit coupling, which opens a gap in the spectrum. The electric held perpendicular to the graphene plane leads then to reduction of the gap width and suppression of the spin Hall insulator phase. The low temperature spin Nernst effect is also calculated from the zero temperature spin Hall conductivity. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:27 / 31
页数:5
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