Dynamical conductivity of AA-stacked bilayer graphene

被引:101
|
作者
Tabert, C. J. [1 ,2 ]
Nicol, E. J. [1 ,2 ,3 ]
机构
[1] Univ Guelph, Dept Phys, Guelph, ON N1G 2W1, Canada
[2] Univ Guelph, Guelph Waterloo Phys Inst, Guelph, ON N1G 2W1, Canada
[3] Univ Calif Santa Barbara, Kavli Inst Theoret Phys, Santa Barbara, CA 93106 USA
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 07期
基金
美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词
MASSLESS DIRAC FERMIONS; DENSITY-OF-STATES; ELECTRONIC-PROPERTIES; PHASE; FIELD;
D O I
10.1103/PhysRevB.86.075439
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the dynamical conductivity of AA-stacked bilayer graphene as a function of frequency and in the presence of a finite chemical potential due to charging. Unlike the monolayer, we find aDrude absorption at charge neutrality in addition to an interband absorption with onset of twice the interlayer hopping energy. At finite doping, the interband absorption exhibits two edges, which depend on both chemical potential and interlayer hopping energy. We study the behavior as a function of varying chemical potential relative to the interlayer hopping energy scale and compute the partial optical sum. The results are contrasted with the previously published case of AB stacking. While we focus on in-plane conductivity, we also provide the perpendicular conductivity for both AB and AA stacking. We also examine conductivity for other variations with AA stacking, such as AAA-stacked trilayer. Based on proposed models for topological insulators discussed in the literature, we also consider the effect of spin-orbit coupling on the optical properties of an AA-stacked bilayer, which illustrates the effect of an energy gap opening at points in the band structure.
引用
收藏
页数:12
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