Improved light outcoupling for top-emitting organic light-emitting devices

被引:30
|
作者
Chen, Shufen [1 ]
Jie, Zhonghai
Zhao, Zhenyuan
Cheng, Gang
Wu, Zhijun
Zhao, Yi
Quan, Baofu
Liu, Shiyong
Li, Xue
Xie, Wenfa
机构
[1] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 130023, Peoples R China
[2] Jilin Univ, Inst Mech Sci & Engn, Changchun 130023, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[4] City Univ Hong Kong, COSDAF, Kowloon, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2236224
中图分类号
O59 [应用物理学];
学科分类号
摘要
Light outcoupling for the top-emitting organic light-emitting device (TEOLED) with the structure of Si/SiO2/Ag/Ag2O/4,4('), 4(')-tris(3-methylphenylphenylamino)triphenylamine/4, 4(')-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline) aluminum (Alq(3))/LiF/Al/Ag is improved by optimizing the semitransparent Al/Ag cathode and employing a ZnS top-capping layer. To both provide a fine electron injection and reduce Al absorption in the visible area, Al thickness is adjusted to 0.3 nm. With another 32-nm-thick ZnS film as a refractive index-matching layer onto the optimized Al (0.3 nm)/Ag (18 nm) electrode, the maximum luminance and efficiency for the TEOLED based on Alq(3) emission reach 145 474 cd/m(2) (13 V) and 12.2 cd/A (5 V), respectively. (c) 2006 American Institute of Physics.
引用
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页数:3
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