Two-dimensional variation of bursting properties in a silicon-neuron half-center oscillator

被引:15
|
作者
Simoni, Mario F. [1 ]
DeWeerth, Stephen P.
机构
[1] Rose Hulman Inst Technol, Terre Haute, IN 47803 USA
[2] Georgia Inst Technol, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
bursting; half-center oscillator; silicon neuron;
D O I
10.1109/TNSRE.2006.881537
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
We are developing hardware models of central pattern generators (CPGs) to enhance neural prostheses, create biologically based controllers for autonomous machines, and to better understand how biology creates stable and robust movements. Previously, we designed and implemented an analog integrated circuit model of a neuron with Hodgkin-Huxley like dynamics, the silicon neuron. In this work, we use silicon neurons to implement a half-center oscillator and show that the underlying dynamics of this CPG produce bursting behaviors that are well matched to the biological counterpart on which our model is based. In addition, we demonstrate the robustness of the bursting behavior by systematically varying two parameters in each silicon neuron and mapping the corresponding effects on the bursting.
引用
收藏
页码:281 / 289
页数:9
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