Silicon-oxynitride (SiON) for photonic integrated circuits

被引：5
|
作者：
Salemink, HWM [1 ]
Horst, F [1 ]
Germann, R [1 ]
Offrein, BJ [1 ]
Bona, GL [1 ]
机构：
[1] IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
来源：
MULTICOMPONENT OXIDE FILMS FOR ELECTRONICS | 1999年 / 574卷
关键词：
D O I：
10.1557/PROC-574-255
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fabrication and analysis of silicon-oxynitride (SiON) as core material for silicon-based planar photonic waveguide circuits. Features of devices made of this particular SiON material are: (1) a silicon-compatible technology (low-cost perspective), (2) a waveguide structure with high dielectric index contrast, allowing a very compact device layout (approximately 10 x smaller radius of curvature than conventional doped SiO2 technology), (3) a low optical loss < 0.15 dB/cm, in the 1550 nm telecommunication window and (4) a negligible polarization dependence. The materials aspects and resulting analyses of the SiON layers as well as particular device properties are described.
引用
收藏
页码：255 / 260
页数：6
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