1.3-μm GaNAsSbGaAs UTC-Photodetectors for 10-Gigabit Ethernet Links

被引:5
|
作者
Fedderwitz, S. [1 ]
Stoehr, A. [1 ]
Tan, K. H. [2 ]
Yoon, S. F. [2 ]
Weiss, M. [1 ]
Poloczek, A. [1 ]
Loke, W. K. [2 ]
Wicaksono, S. [2 ]
Ng, T. K. [2 ]
Rymanov, V. [1 ]
Patra, A. [1 ]
Tangdiongga, E. [3 ]
Jaeger, D. [1 ]
机构
[1] Univ Duisburg Essen, ZHO, D-47057 Duisburg, Germany
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Eindhoven Univ Technol, Fac Elect Engn, NL-5612AZ Eindhoven, Netherlands
关键词
Dilute-nitride-based photodetectors (PDs); fiber-optic transmission; 1,3-mu m photodetectors (PDs);
D O I
10.1109/LPT.2009.2020302
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3-mu m wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate. With an optical bandgap of similar to 0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection- coated PD at 1.3-mu m wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate = 10(-12)) transmission of 10-Gb Ethernet data at 1.3-mu m wavelength is successfully demonstrated.
引用
收藏
页码:911 / 913
页数:3
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